No. |
Part Name |
Description |
Manufacturer |
1 |
1812CXXX |
High Voltage MLC Chip |
AVX Corporation |
2 |
1N2812C |
Zener Voltage Regulator Diode |
Microsemi |
3 |
1N2812C |
Diode Zener Single 14V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
4 |
1N2812CE3 |
Zener Voltage Regulator Diode |
Microsemi |
5 |
1N4812C |
Varactor Diode |
Motorola |
6 |
AME8812CEEV |
300mA CMOS LDO |
AME |
7 |
BA7812CP |
1A Output 78 series Regulators Insert type |
ROHM |
8 |
BA7812CP-E2 |
1A Output 78 series Regulators Insert type |
ROHM |
9 |
CA4812C |
400mW Wideband Linear Amplifier |
Motorola |
10 |
CA4812CS |
400mW Wideband Linear Amplifier |
Motorola |
11 |
EM83812CP |
ALL-INONE PLUG & PLAY SCRLLING SERIAL MOUSE CONTROLLER |
ELAN Microelectronics |
12 |
ERJ1GNF6812C |
General Purpose Precision Thick Chip Resistors |
Panasonic |
13 |
ERJ1RHD6812C |
General Purpose Precision Thick Chip Resistors |
Panasonic |
14 |
ERJU01F6812C |
Anti-Sulfurated Thick Film Chip Resistors |
Panasonic |
15 |
FM4812C11 |
FM48 FiltMod Input Filter Module |
Vicor Corporation |
16 |
FM4812C12 |
FM48 FiltMod Input Filter Module |
Vicor Corporation |
17 |
GBIT0812C |
Transient Voltage Suppressor |
Microsemi |
18 |
HT2812C |
Single Sound Generator |
Holtek Semiconductor |
19 |
K4E640812C |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
20 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
21 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
22 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
23 |
K4E640812C-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
24 |
K4E640812C-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
25 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
26 |
K4E640812C-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
27 |
K4E640812C-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
28 |
K4E640812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
29 |
K4E640812C-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
30 |
K4E640812C-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
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