No. |
Part Name |
Description |
Manufacturer |
1 |
HM4816A-3 |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
2 |
HM4816A-3E |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
3 |
HM4816A-4 |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
4 |
HM4816A-7 |
16384-word by 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
5 |
T4312816A-10S |
8M x 16 SDRAM |
Taiwan Memory Technology |
6 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7 |
T4312816A-6S |
8M x 16 SDRAM |
Taiwan Memory Technology |
8 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
9 |
T4312816A-7.5S |
8M x 16 SDRAM���� |
Taiwan Memory Technology |
10 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
11 |
T4312816A-7S |
8M x 16 SDRAM |
Taiwan Memory Technology |
12 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
13 |
T4312816A-8S |
8M x 16 SDRAM |
Taiwan Memory Technology |
14 |
T4312816A-8S |
125MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
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