No. |
Part Name |
Description |
Manufacturer |
1 |
1N5818-1 |
Si Schottky Rectifier Diodes |
Microsemi |
2 |
1N5818-1E3 |
Si Schottky Rectifier Diodes |
Microsemi |
3 |
ADM1818-10AKS-REEL |
Microprocessor Supervisory in SOT-23 with Manual Push Button Option |
Analog Devices |
4 |
ADM1818-10AKS-RL7 |
Microprocessor Supervisory in SOT-23 with Manual Push Button Option |
Analog Devices |
5 |
ADM1818-10ART-REEL |
Microprocessor Reset Circuits |
Analog Devices |
6 |
ADM1818-10ART-RL7 |
Microprocessor Reset Circuits |
Analog Devices |
7 |
BC808-16 |
0.250W General Purpose PNP SMD Transistor. 25V Vceo, 0.500A Ic, 100 - 250 hFE. Complementary BC818-16 |
Continental Device India Limited |
8 |
BC818-16 |
0.250W General Purpose NPN SMD Transistor. 25V Vceo, 0.500A Ic, 100 - 250 hFE. Complementary BC808-16 |
Continental Device India Limited |
9 |
BC818-16 |
Surface mount Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
10 |
BC818-16 |
Small Signal Transistor (NPN) |
General Semiconductor |
11 |
BC818-16 |
NPN Silicon AF Transistors |
Infineon |
12 |
BC818-16 |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
13 |
BC818-16 |
NPN Silicon AF Transistors |
Siemens |
14 |
BC818-16 |
Transistors, RF & AF |
Vishay |
15 |
BC818-16 |
SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
16 |
BC818-16W |
General Purpose Transistors - NPN Silicon AF Transistor for general AF applications |
Infineon |
17 |
BC818-16W |
NPN general purpose transistor |
Philips |
18 |
BC818-16W |
NPN Silicon AF Transistor (For general AF applications High collector current High current gain) |
Siemens |
19 |
DS1818-10 |
3.3V EconoReset with Pushbutton |
Dallas Semiconductor |
20 |
DS1818-10 |
3.3V EconoReset with Pushbutton |
MAXIM - Dallas Semiconductor |
21 |
DS1818-10+ |
3.3V EconoReset with Pushbutton |
MAXIM - Dallas Semiconductor |
22 |
DS1818-10+T&R |
3.3V EconoReset with Pushbutton |
MAXIM - Dallas Semiconductor |
23 |
EIA1818-1P |
18.15-18.75GHz, 1W internally matched power FET |
Excelics Semiconductor |
24 |
EIB1818-1P |
18.15-18.75GHz, 1W internally matched power FET |
Excelics Semiconductor |
25 |
MCR3818-10 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 800 V. |
Motorola |
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