| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD1820G |
Silicon NPN epitaxial planar type |
Panasonic |
| 2 |
AP2820G |
HIGH-SIDE POWER DISTRIBUTION SWITCH WITH ENABLE AND FLAG |
Diodes |
| 3 |
AP2820GMMTR-G1 |
HIGH-SIDE POWER DISTRIBUTION SWITCH WITH ENABLE AND FLAG |
Diodes |
| 4 |
API820G |
tiny-controller-based voice synthesizer IC |
Aplus Integrated Circuits |
| 5 |
BU4820G |
Standard Voltage Detectors |
ROHM |
| 6 |
BU4820G-TR |
Standard Voltage Detectors |
ROHM |
| 7 |
HDH-00820GID |
Couplers with Connectors (H Type) |
Hirose Electric |
| 8 |
HYR1612820G-653 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 9 |
HYR1612820G-745 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 10 |
HYR1612820G-840 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 11 |
HYR1612820G-845 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 12 |
HYR1812820G-653 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 13 |
HYR1812820G-745 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 14 |
HYR1812820G-840 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 15 |
HYR1812820G-845 |
Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
Infineon |
| 16 |
IFRI820G |
Power MOSFET(Vdss=500V/ Rds(on)=3.0ohm/ Id=2.1A) |
International Rectifier |
| 17 |
IRFI820G |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 18 |
MC820G |
J-K Flip-Flops |
Motorola |
| 19 |
MC820G |
J-K Flip-Flop, Metal Can |
Motorola |
| 20 |
MUR820G |
SWITCHMODE Power Rectifiers |
ON Semiconductor |
| 21 |
NJ8820GG |
Frequency Synthesiser (PROM interface) |
PLESSEY Semiconductors |
| 22 |
SN54ABT7820GB |
512 18 2 STROBED BIDIRECTIONAL FIRST-IN/ FIRST-OUT MEMORY |
Texas Instruments |
| 23 |
SN74ALVCH162820GR |
3.3-V 10-Bit Flip-Flop With Dual Outputs And 3-State Outputs |
Texas Instruments |
| 24 |
SNJ54ABT7820GB |
512 x 18 x 2 bidirectional asynchronous FIFO memory |
Texas Instruments |
| 25 |
UPA1820GR-9JG |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
NEC |
| 26 |
UPA1820GR-9JG-E1 |
N Channel enhancement MOS FET |
NEC |
| 27 |
UPA1820GR-9JG-E2 |
N Channel enhancement MOS FET |
NEC |
| | | |
