No. |
Part Name |
Description |
Manufacturer |
1 |
182NQ030 |
30V 180A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
2 |
182NQ030 |
Schottky Rectifier |
Microsemi |
3 |
182NQ030R |
30V 180A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
4 |
2SC3182N |
Silicon NPN Power Transistors TO-3P(I) package |
Savantic |
5 |
BS-A282ND |
Green, anode, single digit LED display |
Yellow Stone Corp |
6 |
BS-C282ND |
Green, cathode, single digit LED display |
Yellow Stone Corp |
7 |
CT0603CS_-82N_ |
SMD ceramic core wire-wound high current chip inductor |
Central Semiconductor |
8 |
CW252016-82NJ |
CW252016 Series - High Q Chip Inductors |
BOURNS |
9 |
DM74S182N |
Look-Ahead Carry Generator |
Fairchild Semiconductor |
10 |
DM74S182N |
7 V, look-ahead carry generator |
National Semiconductor |
11 |
DS3182N |
3.3 V, Single/dual/triple/quad ATM/packet PHY with Built-in LIU |
MAXIM - Dallas Semiconductor |
12 |
ELJNA82NMF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
13 |
ELJNC82NJF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
14 |
ELJNC82NKF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
15 |
ELJND82NJF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
16 |
ELJND82NKF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
17 |
ELJRE82NGFA |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
18 |
ELJRE82NJFA |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
19 |
ELJRF82NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
20 |
ELJRF82NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
21 |
FBR582ND24N |
COMPACT POWER RELAY 1 POLE X 2?12A (28VDC) (FOR 24V BATTERY AUTOMOTIVE APPLICATIONS) |
Fujitsu Microelectronics |
22 |
FBR582ND24W |
COMPACT POWER RELAY 1 POLE X 2?12A (28VDC) (FOR 24V BATTERY AUTOMOTIVE APPLICATIONS) |
Fujitsu Microelectronics |
23 |
FBR582ND24Y |
COMPACT POWER RELAY 1 POLE X 2?12A (28VDC) (FOR 24V BATTERY AUTOMOTIVE APPLICATIONS) |
Fujitsu Microelectronics |
24 |
FDB082N15A |
N-Channel PowerTrench� MOSFET 150V, 105A, 8.2m? |
Fairchild Semiconductor |
25 |
FDS7082N3 |
30V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
26 |
FJH201/7482N |
2-binary full adder with summation outputs provided for each bit and the resultant carry obtained from the second bit |
Mullard |
27 |
GTD82NS |
Mini size of Discrete semiconductor elements |
SINYORK |
28 |
HSMS-282N |
HSMS-282N · RF mixer/detector diode |
Agilent (Hewlett-Packard) |
29 |
HSMS-282N |
HSMS-282N · RF mixer/detector diode |
Agilent (Hewlett-Packard) |
30 |
HSMS-282N-BLK |
Surface Mount RF Schottky Barrier Diodes |
Agilent (Hewlett-Packard) |
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