| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CA2832H |
Wideband Linear Amplifier 35.5dB, 1-200MHz 1.6W |
Motorola |
| 2 |
K4S640832H-L75 |
64Mb H-die SDRAM Specification |
Samsung Electronic |
| 3 |
K4S640832H-TC75 |
64Mb H-die SDRAM Specification |
Samsung Electronic |
| 4 |
K4S640832H-TL75 |
64Mb H-die SDRAM Specification |
Samsung Electronic |
| 5 |
MAX6832HXRD0+ |
Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits |
MAXIM - Dallas Semiconductor |
| 6 |
MAX6832HXRD0+T |
Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits |
MAXIM - Dallas Semiconductor |
| 7 |
MAX6832HXRD0-T |
1.313 V, 0.07 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 8 |
MAX6832HXRD3+ |
Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits |
MAXIM - Dallas Semiconductor |
| 9 |
MAX6832HXRD3+T |
Ultra-Low-Voltage SC70 Voltage Detectors and µP Reset Circuits |
MAXIM - Dallas Semiconductor |
| 10 |
MAX6832HXRD3-T |
1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 11 |
MT4LDT832HG-5X |
SMALL-OUTLINE DRAM MODULE |
Micron Technology |
| 12 |
MT4LDT832HG-5XS |
SMALL-OUTLINE DRAM MODULE |
Micron Technology |
| 13 |
MT4LDT832HG-6X |
SMALL-OUTLINE DRAM MODULE |
Micron Technology |
| 14 |
MT4LDT832HG-6XS |
SMALL-OUTLINE DRAM MODULE |
Micron Technology |
| | | |
