| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MH51208ANA-85H |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
| 2 |
MH51208ANA-85L |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
| 3 |
MH51208UNA-85 |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
| 4 |
MH51208UNA-85L |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
| 5 |
NX8562LB778-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. Anode ground. FC-PC connector. |
NEC |
| 6 |
NX8562LB828-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. Anode ground. FC-PC connector. |
NEC |
| 7 |
NX8562LF778-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. Anode floating. FC-PC connector. |
NEC |
| 8 |
NX8562LF828-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. Anode floating. FC-PC connector. |
NEC |
| 9 |
NX8563LB778-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. FC-PC connector. Anode ground. |
NEC |
| 10 |
NX8563LB828-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. FC-PC connector. Anode ground. |
NEC |
| 11 |
NX8563LF778-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1577.85 nm. Frequency 190.00 THz. FC-PC connector. Anode floating. |
NEC |
| 12 |
NX8563LF828-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. FC-PC connector. Anode floating. |
NEC |
| 13 |
TC54H1024F-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 14 |
TC54H1024P-85 |
85 ns; V(cc): -0.6 to +7V; 1.5W; 65,536 word x 16 bit one time programmable read only memory |
TOSHIBA |
| 15 |
TC58V1001F-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 16 |
TC58V1001FT-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 17 |
TC58V1001SR-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 18 |
TC58V1001ST-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 19 |
TC58V1001TR-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 20 |
TDSY3150 |
Yellow (585 nm) 7-segment display, 10 mm / 3.94 inch, viewing distance up to 6 meter |
Vishay |
| 21 |
TDSY3160 |
Yellow (585 nm) 7-segment display, 10 mm / 3.94 inch, viewing distance up to 6 meter |
Vishay |
| 22 |
TDSY5150 |
Yellow (585 nm) 7-segment display, 13 mm / 5.12 inch, Viewing distance up to 7 meter |
Vishay |
| 23 |
TDSY5160 |
Yellow (585 nm) 7-segment display, 13 mm / 5.12 inch, Viewing distance up to 7 meter |
Vishay |
| 24 |
TLSY2100 |
Yellow (585 nm) symbol LED |
Vishay |
| 25 |
TLSY2101 |
Yellow (585 nm) symbol LED |
Vishay |
| 26 |
TLSY5100 |
Yellow (585 nm) symbol LED |
Vishay |
| 27 |
TLSY5101 |
Yellow (585 nm) symbol LED |
Vishay |
| 28 |
TSLM5585 |
Chemical-optical sensor platform. Wavelength 585 nm. |
TAOS |
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