| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ300A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 285V(min), 315V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5FMCJ350 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 315V(min), 385V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE220A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=185V, Tolerance=5% |
Comchip Technology |
| 4 |
1.5KE220A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=185V, Tolerance=5% |
Comchip Technology |
| 5 |
1.5KE220CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=185V, Tolerance=5% |
Comchip Technology |
| 6 |
1.5KE220CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=185V, Tolerance=5% |
Comchip Technology |
| 7 |
1.5KE300A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 285V(min), 315V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 8 |
1.5KE350 |
315- 385V transient voltage suppressor |
DC Components |
| 9 |
1.5KE350 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 315V(min), 385V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 10 |
15KP85 |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 11 |
15KP85A |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 12 |
15KP85C |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 13 |
15KP85CA |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 14 |
15KPA85 |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 15 |
15KPA85A |
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 16 |
15KPA85C |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 17 |
15KPA85CA |
Diode TVS Single Bi-Dir 85V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 18 |
1N4607 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 19 |
1N4608 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 20 |
1N461 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 21 |
1N462 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 22 |
1N463 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 23 |
1N464 |
Diode Schottky 85V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 24 |
1N6072A |
Diode TVS Single Bi-Dir 185V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 25 |
2SB633 |
POWER TRANSISTORS(6.0A,85V,40W) |
MOSPEC Semiconductor |
| 26 |
2SB633 |
Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications |
SANYO |
| 27 |
2SB775 |
PNP Epitaxial Planar Silicon Transistor 85V/6A, AF 35W Output Applications |
SANYO |
| 28 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 29 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 30 |
2SC4547 |
NPN Planar Silicon Darlington Transistor 85V/3A Driver Applications |
SANYO |
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