| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N1869A |
THYRISTOR |
Motorola |
| 2 |
2N4869A |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
| 3 |
2N4869A |
N-Channel JFET Low Noise Amplifier |
Intersil |
| 4 |
2N4869A |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
| 5 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 6 |
2N869A |
Silicon PNP Transistor |
Motorola |
| 7 |
2N869A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 8 |
2N869A |
Trans GP BJT PNP 18V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 9 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
| 10 |
2N869A |
Transistor |
SGS-ATES |
| 11 |
AD7869AQ |
LC2MOS Complete, 14-Bit Analog I/O System |
Analog Devices |
| 12 |
ASM3P2869A-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 13 |
ASM3P2869A-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 14 |
ASM3P2869A-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 15 |
ASM3P2869A-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 16 |
ASM3P2869A-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 17 |
ASM3P2869AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 18 |
ASM3P2869AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 19 |
ASM3P2869AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 20 |
ASM3P2869AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 21 |
ASM3P2869AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
| 22 |
K4R441869A |
Direct RDRAM |
Samsung Electronic |
| 23 |
K4R441869A-N(M) |
K4R271669A-N(M):Direct RDRAM� Data Sheet |
Samsung Electronic |
| 24 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 25 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 26 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 27 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 28 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 29 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 30 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
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