| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 2 |
A-3880Y |
1.2 INCH, 8 X 8 DOT MATRIX DISPLAY |
PARA Light |
| 3 |
A-4880Y |
Common anode yellow 1.5 inch, 8x8 dot matrix display |
PARA Light |
| 4 |
A-5880Y |
Common anode yellow 2.3 inch, 8x8 dot matrix display |
PARA Light |
| 5 |
C-3880Y |
1.2 INCH, 8 X 8 DOT MATRIX DISPLAY |
PARA Light |
| 6 |
C-4880Y |
Common cathode yellow 1.5 inch, 8x8 dot matrix display |
PARA Light |
| 7 |
C-5880Y |
2.3 INCH, 8 X 8 DOT MATRIX DISPLAY |
PARA Light |
| 8 |
CSB834Y |
30.000W Low Frequency PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD880Y |
Continental Device India Limited |
| 9 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 10 |
FS7M0880YDTU |
8A/800V 70KHz Power Switch |
Fairchild Semiconductor |
| 11 |
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM |
Samsung Electronic |
| 12 |
K5P2880YCM - T085 |
128M Bit (16Mx8) Nand Flash Memory / Data Sheet |
Samsung Electronic |
| 13 |
K5P2880YCM-T085 |
128M bit (16Mx8) nand flash memory / 8M bit (1Mx8/512Kx16) full CMOS SRAM |
Samsung Electronic |
| 14 |
KSD880Y |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 15 |
KSD880YTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 16 |
LTS-6880Y |
0.56inch (14.22mm) digit height single digit seven-segment display |
Lite-On Technology Corporation |
| 17 |
SD880YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
Panjit International Inc |
| 18 |
SD880YS-T3 |
8.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 19 |
SD880YT |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere) |
Panjit International Inc |
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