No. |
Part Name |
Description |
Manufacturer |
1 |
1024-60LH/883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
2 |
1032-60LG/883 |
High-Density Programmable Logic |
Lattice Semiconductor |
3 |
150K/883C2 |
Diode Switching 800V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
4 |
1N3883 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
5 |
1N3883 |
400V Fast Recovery Diode in a DO-203AA (DO-4) package |
International Rectifier |
6 |
1N3883 |
Fast Rectifier (100-500ns) |
Microsemi |
7 |
1N3883 |
Diode Switching 400V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
8 |
1N3883 |
400 V, 6 A fast recovery rectifier |
Solid State Devices Inc |
9 |
1N3883A |
Diode Switching 400V 6A 2-Pin DO-4 |
New Jersey Semiconductor |
10 |
1N3883E3 |
Fast Rectifier (100-500ns) |
Microsemi |
11 |
1N3883R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
12 |
1N3883R |
Fast Rectifier (100-500ns) |
Microsemi |
13 |
1N3883RE3 |
Fast Rectifier (100-500ns) |
Microsemi |
14 |
1N4883 |
3 WATT GLASS ZENER DIODES |
Microsemi |
15 |
27C16Q883 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
16 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
17 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
18 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
19 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
20 |
27C256Q300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
21 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
22 |
2N5883 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
23 |
2N5883 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
24 |
2N5883 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
25 |
2N5883 |
Trans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
26 |
2N5883 |
Power 25A 60V Discrete PNP |
ON Semiconductor |
27 |
2N5883 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
28 |
2N5883-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
29 |
2N883 |
SCRs (Silicon Controlled Rectifiers) |
Boca Semiconductor Corporation |
30 |
2N883 |
Leaded Thyristor SCR |
Central Semiconductor |
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