| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 2 |
AD1838AS |
Please see the AD1838A. |
Analog Devices |
| 3 |
BDX53 |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 4 |
BDX53A |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 5 |
BDX53B |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 6 |
BDX53C |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 7 |
BDX54 |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 8 |
BDX54A |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 9 |
BDX54B |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 10 |
BDX54C |
POWER TRANSISTORS(8A.,45-100V,60W) |
MOSPEC Semiconductor |
| 11 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
| 12 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
| 13 |
IRF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. |
General Electric Solid State |
| 14 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
| 15 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 16 |
IRF641 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 17 |
NTE5313 |
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 200V. |
NTE Electronics |
| 18 |
NTE5314 |
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 400V. |
NTE Electronics |
| 19 |
NTE5315 |
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 600V. |
NTE Electronics |
| 20 |
NTE5316 |
Single phase bridge rectifier, 8A. Maximum recurrent peak reverse voltage, Prv = 800V. |
NTE Electronics |
| 21 |
NTE5471 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 100V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 22 |
NTE5472 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 200V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 23 |
NTE5473 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 300V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 24 |
NTE5474 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 400V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 25 |
NTE5475 |
Silicon controlled rectifier (SCR). Peak repetitive reverse and reverse blocking voltage Vrrm,Vdrm = 500V. Forward current RMS Itrms = 8A. |
NTE Electronics |
| 26 |
NTE5622 |
TRIAC, 10A. Repetitive peak off-state voltage Vdrm = 50V. RMS on-state current 8A. |
NTE Electronics |
| 27 |
NTE5623 |
TRIAC, 10A. Repetitive peak off-state voltage Vdrm = 100V. RMS on-state current 8A. |
NTE Electronics |
| 28 |
PIC12C508 |
A newer version of this device is available. Please consider PIC12C508A. |
Microchip |
| 29 |
PM200-23B |
Medical switching power supply. Maximum output power 200 W. Output #1: Vnom +5V, Imin 3.0A, Imax 30.0A. Output #2: Vnom +12V, Imin 0A, Imax 8A. |
International Power Sources |
| 30 |
PM200-23C |
Medical switching power supply. Maximum output power 200 W. Output #1: Vnom +5V, Imin 3.0A, Imax 30.0A. Output #2: Vnom +12V, Imin 0A, Imax 8A. |
International Power Sources |
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