| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AS358AP-E1 |
LOW POWER DUAL OPERATIONAL AMPLIFIERS |
Diodes |
| 2 |
FU-318AP-M6 |
InGaAs APD MODULE FOR LONG WAVELENGTH BAND |
Mitsubishi Electric Corporation |
| 3 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 4 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 5 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 6 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 7 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 8 |
MK4118AP-1 |
1Kx8-bit static RAM, 120ns acces time, 120ns cycle time. |
Mostek |
| 9 |
MK4118AP-2 |
1Kx8-bit static RAM, 150ns acces time, 150ns cycle time. |
Mostek |
| 10 |
MK4118AP-3 |
1Kx8-bit static RAM, 200ns acces time, 200ns cycle time. |
Mostek |
| 11 |
MK4118AP-4 |
1Kx8-bit static RAM, 250ns acces time, 250ns cycle time. |
Mostek |
| 12 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 13 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 14 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 15 |
TMP80C48AP-6 |
CMOS 8-BIT SINGLE-CHIP MICROCOMPUTER (TLCS-48C) |
TOSHIBA |
| | | |
