| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATF1508AS-10AC100 |
High Performance E2 PLD |
Atmel |
| 2 |
ATF1508AS-10JC84 |
High Performance E2 PLD |
Atmel |
| 3 |
ATF1508AS-10QC100 |
High Performance E2 PLD |
Atmel |
| 4 |
ATF1508AS-10QC160 |
High Performance E2 PLD |
Atmel |
| 5 |
ATF1508AS-15AC100 |
High Performance E2 PLD |
Atmel |
| 6 |
ATF1508AS-15AI100 |
High performance EE PLD, 100MHz |
Atmel |
| 7 |
ATF1508AS-15JC84 |
High Performance E2 PLD |
Atmel |
| 8 |
ATF1508AS-15JI84 |
High Performance E2 PLD |
Atmel |
| 9 |
ATF1508AS-15QC100 |
High Performance E2 PLD |
Atmel |
| 10 |
ATF1508AS-15QC160 |
High Performance E2 PLD |
Atmel |
| 11 |
ATF1508AS-15QI100 |
High Performance E2 PLD |
Atmel |
| 12 |
ATF1508AS-15QI160 |
High Performance E2 PLD |
Atmel |
| 13 |
ATF1508AS-7AC100 |
High Performance E2 PLD |
Atmel |
| 14 |
ATF1508AS-7JC84 |
High performance EE PLD, 166.7MHz |
Atmel |
| 15 |
ATF1508AS-7QC100 |
High Performance E2 PLD |
Atmel |
| 16 |
ATF1508AS-7QC160 |
High Performance E2 PLD |
Atmel |
| 17 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 18 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 19 |
BCR08AS-8 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 20 |
CR08AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 21 |
CR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 22 |
DS1238AS-10 |
MicroManager |
Dallas Semiconductor |
| 23 |
DS1238AS-10 |
MicroManager |
MAXIM - Dallas Semiconductor |
| 24 |
DS1238AS-10+ |
MicroManager |
MAXIM - Dallas Semiconductor |
| 25 |
DS1238AS-5 |
MicroManager |
Dallas Semiconductor |
| 26 |
DS1238AS-5+ |
MicroManager |
MAXIM - Dallas Semiconductor |
| 27 |
HMUA-8AS-3 |
MU Type Fiber Optic Connectors |
Hirose Electric |
| 28 |
KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
| 29 |
KM416RD8AS-RM80 |
256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). |
Samsung Electronic |
| 30 |
KM416RD8AS-SCM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package |
Samsung Electronic |
| | | |
