| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CY39100V208B-200NTC |
Development Software |
Cypress |
| 2 |
CY39100V388B-200MGC |
Development Software |
Cypress |
| 3 |
DF18B-20DP-0.4V |
0.4mm Contact Pitch, 1.5mm above the board, Board-to-Board / Board-to-FPC Connectors |
Hirose Electric |
| 4 |
DF18B-20DS-0.4V |
0.4mm Contact Pitch, 1.5mm above the board, Board-to-Board / Board-to-FPC Connectors |
Hirose Electric |
| 5 |
GAL20V8B-20QJI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 6 |
GAL20V8B-20QPI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 7 |
GS816218B-200 |
6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
| 8 |
GS816218B-200I |
6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
| 9 |
GS8162Z18B-200 |
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 10 |
GS8162Z18B-200I |
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 11 |
GS832218B-200 |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
| 12 |
GS832218B-200I |
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs |
GSI Technology |
| 13 |
GS8322Z18B-200 |
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM |
GSI Technology |
| 14 |
GS8322Z18B-200I |
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM |
GSI Technology |
| 15 |
GS832418B-200 |
200MHz 7.5ns 2M x 18 36Mb S/DCD sync burst SRAM |
GSI Technology |
| 16 |
GS832418B-200I |
200MHz 7.5ns 2M x 18 36Mb S/DCD sync burst SRAM |
GSI Technology |
| 17 |
GS8324Z18B-200 |
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM |
GSI Technology |
| 18 |
GS8324Z18B-200I |
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM |
GSI Technology |
| 19 |
GS8644Z18B-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
| 20 |
GS8644Z18B-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM |
GSI Technology |
| 21 |
GS88418B-200 |
200MHz 512K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 22 |
GS88418B-200I |
200MHz 7.5ns 512K x 18 8Mb S/DCD sync burst SRAM |
GSI Technology |
| 23 |
PIC16C58B-20/P |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 24 |
PIC16C58B-20/SO |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 25 |
PIC16C58B-20/SS |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 26 |
PIC16C58B-20E/P |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 27 |
PIC16C58B-20E/SO |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 28 |
PIC16C58B-20E/SS |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 29 |
PIC16C58B-20I/P |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 30 |
PIC16C58B-20I/SO |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
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