| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FX8C-060/060P11-SV1J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 2 |
FX8C-060/060P11-SV2J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 3 |
FX8C-060/060P11-SV4J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 4 |
FX8C-060/060P11-SV6J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 5 |
FX8C-060/060P11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 6 |
FX8C-060/060S11-SV5J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 7 |
FX8C-060/060S11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 8 |
FX8C-080/080P11-SV1J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 9 |
FX8C-080/080P11-SV2J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 10 |
FX8C-080/080P11-SV4J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 11 |
FX8C-080/080P11-SV6J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 12 |
FX8C-080/080P11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 13 |
FX8C-080/080S11-SV5J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 14 |
FX8C-080/080S11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
| 15 |
IA82050-PDW28C-01 |
ASYNCHRONOUS SERIAL CONTROLLER |
innovASIC |
| 16 |
IA82050-PLC28C-01 |
ASYNCHRONOUS SERIAL CONTROLLER |
innovASIC |
| 17 |
P1708C-08SR |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
| 18 |
P1708C-08ST |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
| 19 |
P1708C-08TR |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
| 20 |
P1708C-08TT |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
| 21 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 22 |
XC8C-0951L-AW |
XC9 |
OMRON Electronics |
| 23 |
XC8C-0951S-0 |
XC9 |
OMRON Electronics |
| 24 |
XC8C-0951S-4 |
XC9 |
OMRON Electronics |
| | | |
