No. |
Part Name |
Description |
Manufacturer |
1 |
CASE 648C-02 |
Package Outline Dimensions |
Motorola |
2 |
FX8C-060/060P11-SV1J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
3 |
FX8C-060/060P11-SV2J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
4 |
FX8C-060/060P11-SV4J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
5 |
FX8C-060/060P11-SV6J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
6 |
FX8C-060/060P11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
7 |
FX8C-060/060S11-SV5J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
8 |
FX8C-060/060S11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
9 |
FX8C-080/080P11-SV1J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
10 |
FX8C-080/080P11-SV2J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
11 |
FX8C-080/080P11-SV4J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
12 |
FX8C-080/080P11-SV6J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
13 |
FX8C-080/080P11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
14 |
FX8C-080/080S11-SV5J |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
15 |
FX8C-080/080S11-SVJ |
0.6mm Pitch Stacking Height 3mm to 16mm Connector |
Hirose Electric |
16 |
IA82050-PDW28C-01 |
ASYNCHRONOUS SERIAL CONTROLLER |
innovASIC |
17 |
IA82050-PLC28C-01 |
ASYNCHRONOUS SERIAL CONTROLLER |
innovASIC |
18 |
P1708C-08SR |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
19 |
P1708C-08ST |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
20 |
P1708C-08TR |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
21 |
P1708C-08TT |
3.3 V, 50 MHz to 110 MHz, low power notebook LCD panel EMI reduction IC |
Alliance Semiconductor |
22 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
23 |
XC8C-0951L-AW |
XC9 |
OMRON Electronics |
24 |
XC8C-0951S-0 |
XC9 |
OMRON Electronics |
25 |
XC8C-0951S-4 |
XC9 |
OMRON Electronics |
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