No. |
Part Name |
Description |
Manufacturer |
1 |
BZV48C200 |
188 to 212V; P(tot): 5W; zener diode |
SGS Thomson Microelectronics |
2 |
BZV58C200 |
Silicon-Power-Z-Diodes (non-planar technology) |
Diotec Elektronische |
3 |
BZV58C200 |
200 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
4 |
BZX98C200 |
Silicon Planar Z Diode 12.5 Watt in metal case 200V |
Siemens |
5 |
KM48C2000B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
6 |
KM48C2000BK-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
7 |
KM48C2000BK-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
8 |
KM48C2000BK-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
9 |
KM48C2000BKL-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
10 |
KM48C2000BKL-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
11 |
KM48C2000BKL-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
12 |
KM48C2000BS-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
13 |
KM48C2000BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
14 |
KM48C2000BS-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
15 |
KM48C2000BSL-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
16 |
KM48C2000BSL-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
17 |
KM48C2000BSL-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
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