No. |
Part Name |
Description |
Manufacturer |
1 |
8D-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
2 |
DF18D-20DP-0.4V |
0.4mm Contact Pitch, 1.5mm above the board, Board-to-Board / Board-to-FPC Connectors |
Hirose Electric |
3 |
DF18D-20DS-0.4V |
0.4mm Contact Pitch, 1.5mm above the board, Board-to-Board / Board-to-FPC Connectors |
Hirose Electric |
4 |
GAL16V8D-20LD/833 |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
5 |
GAL16V8D-20LD_883 |
High performance E2CMOS PLD generic array logic, 20ns |
Lattice Semiconductor |
6 |
GAL16V8D-20LR/833 |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
7 |
GAL16V8D-20LR_883 |
High performance E2CMOS PLD generic array logic, 20ns |
Lattice Semiconductor |
8 |
GAL16V8D-20QJI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
9 |
GAL16V8D-20QPI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
10 |
GS8161Z18D-200I |
6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
11 |
GS816218D-200 |
6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
12 |
GS816218D-200I |
6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
13 |
GS8162Z18D-200 |
200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
14 |
GS8162Z18D-200I |
200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
15 |
GS8180Q18D-200 |
200MHz 1M x 18 18MB sigmaQuad SRAM |
GSI Technology |
16 |
GS8180Q18D-200I |
200MHz 1M x 18 18MB sigmaQuad SRAM |
GSI Technology |
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