No. |
Part Name |
Description |
Manufacturer |
1 |
CAT24WC08J-1.8TE13F |
1K/2K/4K/8K/16K-Bit Serial E2PROM |
Catalyst Semiconductor |
2 |
CAT24WC128J-1.8TE13 |
1.8V-6.0V 128K-bit IIC serial CMOS EEPROM |
Catalyst Semiconductor |
3 |
GS71108J-10 |
10ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
4 |
GS71108J-10I |
10ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
5 |
GS71108J-12 |
12ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
6 |
GS71108J-12I |
12ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
7 |
GS71108J-15 |
15ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
8 |
GS71108J-15I |
15ns 128K x 8 1Mb asynchronous SRAM |
GSI Technology |
9 |
GS72108J-10 |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
10 |
GS72108J-10I |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
11 |
GS72108J-12 |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
12 |
GS72108J-12I |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
13 |
GS72108J-15 |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
14 |
GS72108J-15I |
256K x 8 2Mb Asynchronous SRAM |
GSI Technology |
15 |
GS74108J-10 |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
16 |
GS74108J-10I |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
17 |
GS74108J-12 |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
18 |
GS74108J-12I |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
19 |
GS74108J-15 |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
20 |
GS74108J-15I |
512K x 8 4Mb Asynchronous SRAM |
GSI Technology |
21 |
M5M54R08J-12 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
22 |
M5M54R08J-15 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
23 |
M5M5V4R08J-12 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
24 |
M5M5V4R08J-15 |
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
25 |
PA7128J-15 |
15ns programmable electrically erasable logic array |
ICT |
26 |
PEEL18CV8J-10 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
27 |
PEEL18CV8J-15 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
28 |
TC55328J-17 |
17ns; V(dd): -0.5 to +7.0V; 1W; 32,768 word x 8-bit CMOS static RAM |
TOSHIBA |
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