| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D2228N400 |
Silicon Diode - standard rectifier |
IPRS Baneasa |
| 2 |
D358N400 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 3 |
D358N400 |
358A 400V Power Rectifier Diode |
IPRS Baneasa |
| 4 |
D408N400 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 5 |
D408N400 |
408A 400 Power Rectifier Diode |
IPRS Baneasa |
| 6 |
D448N400 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 7 |
D798N400 |
Silicon Diode - Standard Rectifier |
IPRS Baneasa |
| 8 |
FQA38N40 |
300V N-Channel MOSFET |
Fairchild Semiconductor |
| 9 |
MTM8N40 |
N-Channel Power MOSFETs, 10A, 350V/400V |
Fairchild Semiconductor |
| 10 |
MTM8N40 |
N-CHANNEL TMOS POWER FET 8A 400V 0.8 ohms |
Motorola |
| 11 |
NGB18N40CLB |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 12 |
NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 13 |
NGD18N40CLB |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
| 14 |
NGD18N40CLBT4 |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
| 15 |
NGD18N45CLB |
Ignition IGBT, N-Channel, 18 A, 450 V, DPAK |
ON Semiconductor |
| 16 |
Q2008N4 |
200 V, 8 A triac |
Teccor Electronics |
| 17 |
Q4008N4 |
400 V, 8 A triac |
Teccor Electronics |
| 18 |
S87C652-8N40 |
CMOS single-chip 8-bit microcontrollers |
Philips |
| 19 |
S87C654-8N40 |
CMOS single-chip 8-bit microcontroller |
Philips |
| 20 |
STGB18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 21 |
STGB18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 22 |
STGB18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 23 |
STGD18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 24 |
STGD18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 25 |
STGD18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 26 |
STGP18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 27 |
T0,8N400 |
0.8A 400V Thyristor |
IPRS Baneasa |
| 28 |
T0,8N4A00 |
Silicon thyristor |
ITT Industries |
| 29 |
T0,8N4AOO |
Silicon thyristor |
ITT Industries |
| 30 |
T1258N400 |
Mains frequency thyristor |
IPRS Baneasa |
| | | |
