Datasheets for 8N4

Datasheets found :: 24 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	D358N400	358A 400V Power Rectifier Diode	IPRS Baneasa
2	D408N400	408A 400 Power Rectifier Diode	IPRS Baneasa
3	FQA38N40	300V N-Channel MOSFET	Fairchild Semiconductor
4	MTM8N40	N-Channel Power MOSFETs, 10A, 350V/400V	Fairchild Semiconductor
5	NGB18N40CLB	Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)	ON Semiconductor
6	NGB18N40CLBT4	Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)	ON Semiconductor
7	NGD18N40CLB	Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)	ON Semiconductor
8	NGD18N40CLBT4	Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)	ON Semiconductor
9	NGD18N45CLB	Ignition IGBT, N-Channel, 18 A, 450 V, DPAK	ON Semiconductor
10	Q2008N4	200 V, 8 A triac	Teccor Electronics
11	Q4008N4	400 V, 8 A triac	Teccor Electronics
12	S87C652-8N40	CMOS single-chip 8-bit microcontrollers	Philips
13	S87C654-8N40	CMOS single-chip 8-bit microcontroller	Philips
14	STGB18N40LZ	EAS 180 mJ - 390 V - internally clamped IGBT	ST Microelectronics
15	STGB18N40LZ-1	EAS 180 mJ - 390 V - internally clamped IGBT	ST Microelectronics
16	STGB18N40LZT4	EAS 180 mJ - 390 V - internally clamped IGBT	ST Microelectronics
17	STGD18N40LZ	EAS 180 mJ - 390 V - internally clamped IGBT	ST Microelectronics
18	STGD18N40LZ-1	EAS 180 mJ - 390 V - internally clamped IGBT	ST Microelectronics
19	STGD18N40LZT4	EAS 180 mJ - 390 V - internally clamped IGBT	ST Microelectronics
20	STGP18N40LZ	EAS 180 mJ - 390 V - internally clamped IGBT	ST Microelectronics
21	T0,8N400	0.8A 400V Thyristor	IPRS Baneasa
22	T158N400	160 AMPS 400V THYRISTOR	IPRS Baneasa
23	T198N400	200 AMPS 400V THYRISTOR	IPRS Baneasa
24	WT8048N4	DPMS (Display Power Management Signaling) Detector for Green Monitor	Weltrend Semiconductor

Datasheets found :: 24 Page: | 1 |