No. |
Part Name |
Description |
Manufacturer |
1 |
D358N400 |
358A 400V Power Rectifier Diode |
IPRS Baneasa |
2 |
D408N400 |
408A 400 Power Rectifier Diode |
IPRS Baneasa |
3 |
FQA38N40 |
300V N-Channel MOSFET |
Fairchild Semiconductor |
4 |
MTM8N40 |
N-Channel Power MOSFETs, 10A, 350V/400V |
Fairchild Semiconductor |
5 |
NGB18N40CLB |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
6 |
NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
7 |
NGD18N40CLB |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
8 |
NGD18N40CLBT4 |
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on) |
ON Semiconductor |
9 |
S87C652-8N40 |
CMOS single-chip 8-bit microcontrollers |
Philips |
10 |
S87C654-8N40 |
CMOS single-chip 8-bit microcontroller |
Philips |
11 |
STGB18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
12 |
STGB18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
13 |
STGB18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
14 |
STGD18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
15 |
STGD18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
16 |
STGD18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
17 |
STGP18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
18 |
T0,8N400 |
0.8A 400V Thyristor |
IPRS Baneasa |
19 |
T158N400 |
160 AMPS 400V THYRISTOR |
IPRS Baneasa |
20 |
T198N400 |
200 AMPS 400V THYRISTOR |
IPRS Baneasa |
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