| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AOTF8N80 |
Single HV MOSFETs (500V - 1000V) |
Alpha & Omega Semiconductor |
| 2 |
D358N800 |
358A 800V Power Rectifier Diode |
IPRS Baneasa |
| 3 |
D408N800 |
408A 800 Power Rectifier Diode |
IPRS Baneasa |
| 4 |
FKPF8N80 |
Bi-Directional Triode Thyristor Planar Silicon |
Fairchild Semiconductor |
| 5 |
FQA8N80 |
800V N-Channel MOSFET |
Fairchild Semiconductor |
| 6 |
FQA8N80C |
800V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 7 |
FQAF8N80 |
800V N-Channel MOSFET |
Fairchild Semiconductor |
| 8 |
FQP8N80C |
800V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 9 |
FQPF8N80C |
800V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
| 10 |
IXFH8N80 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 11 |
IXFK38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 12 |
IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 13 |
IXFR38N80Q2 |
Electrically Isolated Back Surface |
IXYS Corporation |
| 14 |
IXFX38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 15 |
SPA08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 16 |
SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 17 |
SPP08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 18 |
STD8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 19 |
STF8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 20 |
STFI8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 21 |
STH8N80 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 22 |
STH8N80FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 23 |
STL8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in a PowerFLAT(TM) 5x6 VHV package |
ST Microelectronics |
| 24 |
STP8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package |
ST Microelectronics |
| 25 |
STU8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package |
ST Microelectronics |
| 26 |
T158N800 |
160 AMPS 800V THYRISTOR |
IPRS Baneasa |
| 27 |
T198N800 |
200 AMPS 800V THYRISTOR |
IPRS Baneasa |
| 28 |
TSM8N80CI |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| 29 |
TSM8N80CZ |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| | | |
