No. |
Part Name |
Description |
Manufacturer |
1 |
2SB1708Q5 |
PNP Low V<sub>CE(sat)</sub> Transistor (-30V / -3A) |
ROHM |
2 |
2SB1708Q5TL |
PNP Low V<sub>CE(sat)</sub> Transistor (-30V / -3A) |
ROHM |
3 |
8Q512K32 |
16Megabit SRAM MCM |
Aeroflex Circuit Technology |
4 |
CSD16408Q5 |
N-Channel NexFET� Power MOSFET |
Texas Instruments |
5 |
CSD16408Q5C |
DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 |
Texas Instruments |
6 |
CSD17578Q5A |
CSD17578Q5A 30 V N-Channel NexFET? Power MOSFET 8-VSONP |
Texas Instruments |
7 |
CSD17578Q5A |
CSD17578Q5A 30 V N-Channel NexFET? Power MOSFET 8-VSONP |
Texas Instruments |
8 |
CSD17578Q5AT |
CSD17578Q5A 30 V N-Channel NexFET? Power MOSFET 8-VSONP |
Texas Instruments |
9 |
CSD17578Q5AT |
CSD17578Q5A 30 V N-Channel NexFET? Power MOSFET 8-VSONP |
Texas Instruments |
10 |
DAC08Q5/38510 |
JAN 8-BIT MULTIPLYING D/A CONVERTER |
Precision Monolithics |
11 |
UT8Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V. |
Aeroflex Circuit Technology |
12 |
UT8Q512-20ICA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. |
Aeroflex Circuit Technology |
13 |
UT8Q512-20ICC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. |
Aeroflex Circuit Technology |
14 |
UT8Q512-20ICX |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. |
Aeroflex Circuit Technology |
15 |
UT8Q512-20IPC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
16 |
UT8Q512-20IWA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
17 |
UT8Q512-20IWC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
18 |
UT8Q512-20IWX |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
19 |
UT8Q512-20UCA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. |
Aeroflex Circuit Technology |
20 |
UT8Q512-20UCC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. |
Aeroflex Circuit Technology |
21 |
UT8Q512-20UCX |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. |
Aeroflex Circuit Technology |
22 |
UT8Q512-20UPC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
23 |
UT8Q512-20UWA |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish hot solder dipped. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
24 |
UT8Q512-20UWC |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
25 |
UT8Q512-20UWX |
512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
26 |
UT8Q512-ICA |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish hot solder dipped. Military temperature range flow. |
Aeroflex Circuit Technology |
27 |
UT8Q512-ICC |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Military temperature range flow. |
Aeroflex Circuit Technology |
28 |
UT8Q512-ICX |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Military temperature range flow. |
Aeroflex Circuit Technology |
29 |
UT8Q512-IPC |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
30 |
UT8Q512-IWA |
512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. |
Aeroflex Circuit Technology |
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