| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BZT52C18T-7 |
SURFACE MOUNT ZENER DIODE |
Diodes |
| 2 |
BZT52C6V8T-7 |
SURFACE MOUNT ZENER DIODE |
Diodes |
| 3 |
BZT585B18T-7 |
Discrete - Diodes (Less than 0.5A) - Zener Diodes |
Diodes |
| 4 |
BZT585B6V8T-7 |
Discrete - Diodes (Less than 0.5A) - Zener Diodes |
Diodes |
| 5 |
BZX84C18T-7-F |
Zener Diodes |
Diodes |
| 6 |
BZX84C6V8T-7-F |
Zener Diodes |
Diodes |
| 7 |
DDZ9698T-7 |
Discrete - Diodes (Less than 0.5A) - Zener Diodes |
Diodes |
| 8 |
DDZ9708T-7 |
Discrete - Diodes (Less than 0.5A) - Zener Diodes |
Diodes |
| 9 |
GS8160F18T-7 |
7ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
| 10 |
GS8160F18T-7.5 |
7.5ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
| 11 |
GS8160F18T-7.5I |
7.5ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
| 12 |
GS8160F18T-7I |
7ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
| 13 |
HM628128T-7 |
70ns; V(cc): -0.5 to +7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM |
Hitachi Semiconductor |
| 14 |
IC61SF51218T-7.5TQ |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 15 |
IC61SF51218T-7.5TQI |
7.5ns; 2.5-3.3V; 512K x 18; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 16 |
PEEL18CV8T-7 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
| | | |
