No. |
Part Name |
Description |
Manufacturer |
1 |
BQ2018TS-E1 |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
2 |
BQ2018TS-E1TR |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) |
Texas Instruments |
3 |
BQ2018TS-E1TRG4 |
Multi-Chemistry Charge/Discharge Counter W/ High-Speed 1-Wire I/F (HDQ) 8-TSSOP -20 to 70 |
Texas Instruments |
4 |
BZX84C18TS-7-F |
Zener Diodes |
Diodes |
5 |
BZX84C6V8TS-7-F |
Zener Diodes |
Diodes |
6 |
GS70328TS-10 |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
7 |
GS70328TS-10I |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
8 |
GS70328TS-12 |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
9 |
GS70328TS-12I |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
10 |
GS70328TS-15 |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
11 |
GS70328TS-15I |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
12 |
GS70328TS-7 |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
13 |
GS70328TS-7I |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
14 |
GS70328TS-8 |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
15 |
GS70328TS-8I |
32K x 8 256Kb Asynchronous SRAM |
GSI Technology |
16 |
MSM56V16160F-8TS-K |
2-bank x 524,288-word x 16-bit cynchronous dynamic RAM |
OKI electronic components |
17 |
MSM56V16800E-8TS-K |
2-bank x 1,048,576-word x 8-bit cynchronous dynamic RAM |
OKI electronic components |
18 |
MSM56V16800F-8TS-K |
2-bank x 1,048,576-word x 8-bit cynchronous dynamic RAM |
OKI electronic components |
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