No. |
Part Name |
Description |
Manufacturer |
1 |
MH51208UNA-10 |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
2 |
MH51208UNA-10L |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
3 |
MH51208UNA-12 |
Access time: 120 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
4 |
MH51208UNA-12L |
Access time: 120 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
5 |
MH51208UNA-15 |
Access time: 150 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
6 |
MH51208UNA-15L |
Access time: 150 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
7 |
MH51208UNA-85 |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
8 |
MH51208UNA-85L |
Access time: 85 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
9 |
PMN28UN |
N-channel TrenchMOS ultra low level FET |
NXP Semiconductors |
10 |
PMN28UN |
TrenchMOS(TM) ultra low level FET |
Philips |
11 |
PMN28UNE |
20 V, N-channel Trench MOSFET |
Nexperia |
12 |
PMV28UN |
20 V, 3.3 A N-channel Trench MOSFET |
Nexperia |
13 |
PMV28UNEA |
20 V, N-channel Trench MOSFET |
Nexperia |
14 |
PMWD18UN |
Dual uTrenchMOS(tm) ultra low level FET |
Philips |
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