| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HN58V1001 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
| 2 |
HN58V1001FP-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
| 3 |
HN58V1001FP-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 4 |
HN58V1001FP-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 5 |
HN58V1001P-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
| 6 |
HN58V1001T |
Parallel EEPROMs |
Hitachi Semiconductor |
| 7 |
HN58V1001T-25 |
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function |
Hitachi Semiconductor |
| 8 |
HN58V1001T-25 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 9 |
HN58V1001T-25E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 10 |
TC58V1001F-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
| 11 |
TC58V1001F-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 12 |
TC58V1001FT-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
| 13 |
TC58V1001FT-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 14 |
TC58V1001SR-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
| 15 |
TC58V1001SR-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 16 |
TC58V1001ST-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
| 17 |
TC58V1001ST-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| 18 |
TC58V1001TR-10L |
131,072-word by 8 bit static RAM, 100 ns |
TOSHIBA |
| 19 |
TC58V1001TR-85L |
131,072-word by 8 bit static RAM, 85 ns |
TOSHIBA |
| | | |
