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Datasheets for 9.7

Datasheets found :: 144
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0259.750 Hazardous Area Fuses Littelfuse
2 1N5146 Diode VAR Cap Single 60V 29.7pF 2-Pin DO-7 New Jersey Semiconductor
3 1N5635 Diode TVS Single Uni-Dir 9.72V 1.5KW 2-Pin DO-13 New Jersey Semiconductor
4 1N5635B Diode TVS Single Uni-Dir 9.72V 1.5KW 2-Pin DO-13 Bulk New Jersey Semiconductor
5 1N6120 Diode TVS Single Bi-Dir 29.7V 500W 2-Pin Case G-95 New Jersey Semiconductor
6 1N6120A Diode TVS Single Bi-Dir 29.7V 500W 2-Pin New Jersey Semiconductor
7 1N6156 Diode TVS Single Bi-Dir 29.7V 1.5KW 2-Pin New Jersey Semiconductor
8 1N6156A Diode TVS Single Bi-Dir 29.7V 1.5KW 2-Pin New Jersey Semiconductor
9 1N6273 Diode TVS Single Uni-Dir 9.72V 1.5KW 2-Pin Case 1 New Jersey Semiconductor
10 259.75 Hazardous Area Fuses Littelfuse
11 279.7 Axial Lead and Cartridge Fuses Littelfuse
12 279.700 Axial Lead and Cartridge Fuses Littelfuse
13 279.75 Axial Lead and Cartridge Fuses Littelfuse
14 279.750 Axial Lead and Cartridge Fuses Littelfuse
15 BSO104N03S Low Voltage MOSFETs - OptiMOS�2 Power MOSFET, 30V, SO8, RDSon = 9.7mOhm, 13A, LL Infineon
16 D2525P22 Wavelength-selected isolated DFB laser module with PMF. ITU frequency 192.2. Wavelength 1559.79. Tolerance +-0.4nm. Agere Systems
17 D2525P874 Wavelength-selected isolated DFB laser module with PMF. ITU frequency 187.4. Wavelength 1599.75. Tolerance +-0.4nm. Agere Systems
18 D2525P897 Wavelength-selected isolated DFB laser module with PMF. ITU frequency 189.7. Wavelength 1580.35. Tolerance +-0.4nm. Agere Systems
19 DSC1001DI4-059.7800T Clock and Timing - Oscillators Microchip
20 E2502H22 2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1559.79 nm. Frequency 192.2 THz. Agere Systems
21 E2502H47 2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1539.77 nm. Frequency 194.7 THz. Agere Systems
22 EIA1819-1P 18.7-19.7GHz, 1W internally matched power FET Excelics Semiconductor
23 EIA1819-2P 18.7-19.7GHz, 2W internally matched power FET Excelics Semiconductor
24 EIB1819-1P 18.7-19.7GHz, 1W internally matched power FET Excelics Semiconductor
25 EIB1819-2P 18.7-19.7GHz, 2W internally matched power FET Excelics Semiconductor
26 GS81032A2T-138 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM GSI Technology
27 GS81032AQ-138 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM GSI Technology
28 GS81032AQ-138I 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM GSI Technology
29 GS81032AT-138I 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM GSI Technology
30 GS820E32AQ-138 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM GSI Technology


Datasheets found :: 144
Page: | 1 | 2 | 3 | 4 | 5 |



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