| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP190 |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 2 |
15KP190A |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 3 |
15KP190C |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 4 |
15KP190CA |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 5 |
1N265 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 6 |
1N3769 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 7 |
1N476 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 8 |
1N477 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 9 |
1N479 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 10 |
1N490 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 11 |
1N5280AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. Tolerance +-10%. |
Microsemi |
| 12 |
1N5280BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. Tolerance +-5%. |
Microsemi |
| 13 |
1N5280UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. |
Microsemi |
| 14 |
1N5387B |
190 V, 5 mA, 5 W glass passivated zener diode |
Fagor |
| 15 |
1N5387B |
190 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 16 |
1N631 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 17 |
1N632 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 18 |
1SMB2EZ190 |
190 V, 2 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 19 |
1SMB3EZ190 |
190 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 20 |
1SMC5387 |
190 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 21 |
1V250 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 22 |
1Z390 |
Silicon diffused type zener diode. Typ zener voltage 390 V. |
Panasonic |
| 23 |
2EZ190 |
190 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 24 |
2EZ190 |
190 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 25 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 26 |
2V250 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
| 27 |
3EZ190 |
190 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 28 |
3EZ190D |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 29 |
3EZ190D1 |
3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 30 |
3EZ190D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 190 V. 1% tolerance. |
Motorola |
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