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Datasheets for 90.0

Datasheets found :: 42
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 1.5FMCJ100 Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
2 1.5KE100 90.0- 110.0V transient voltage suppressor DC Components
3 1.5KE100 GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
4 1.5KE100C Transient voltage suppressor. 1500 W. Breakdown voltage 90.0 V(min), 110 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
5 1.5KE200A Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
6 1.5KE200CA Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
7 2N3055HV 90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. Continental Device India Limited
8 BD905 90.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. Continental Device India Limited
9 BD906 90.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. Continental Device India Limited
10 BD907 90.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 40 - 250 hFE. Continental Device India Limited
11 BD908 90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE. Continental Device India Limited
12 BD909 90.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. Continental Device India Limited
13 BD910 90.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. Continental Device India Limited
14 BD911 90.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. Continental Device India Limited
15 BD912 90.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. Continental Device India Limited
16 CSA1301OF 90.000W Power PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 80 - 200 hFE. Continental Device India Limited
17 CSA1943F 90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 160 hFE. Complementary CSC5200F Continental Device India Limited
18 CSA1943FO 90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 80 - 160 hFE. Complementary CSC5200FO Continental Device India Limited
19 CSA1943FR 90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 110 hFE. Complementary CSC5200FR Continental Device India Limited
20 CSB817OF 90.000W Power PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE. Continental Device India Limited
21 CSC3280OF 90.000W Power NPN Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 80 - 200 hFE. Continental Device India Limited
22 CSC5200F 90.000W Power NPN Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 160 hFE. Continental Device India Limited
23 CSD1047OF 90.000W Power NPN Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE. Continental Device India Limited
24 D2525P900 Wavelength-selected isolated DFB laser module with PMF. ITU frequency 190.0. Wavelength 1577.85. Tolerance +-0.4nm. Agere Systems
25 DSC1001BI5-090.0000 Clock and Timing - Oscillators Microchip
26 DSC1001BI5-090.0000T Clock and Timing - Oscillators Microchip
27 DSC1001DL2-090.0000 Clock and Timing - Oscillators Microchip
28 DSC1001DL2-090.0000T Clock and Timing - Oscillators Microchip
29 DSC1003DL2-090.0000T Clock and Timing - Oscillators Microchip
30 DV40400 CHARACTER LCD MODULE display format: 40x4 ; module size: 190.0x54.0x10.5; viewing size: 147.0x29.5; dot size: 0.50x0.55; character size: 3.54x4.89; Data International CO.LTD.


Datasheets found :: 42
Page: | 1 | 2 |



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