No. |
Part Name |
Description |
Manufacturer |
1 |
1.5FMCJ100 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
2 |
1.5KE100 |
90.0- 110.0V transient voltage suppressor |
DC Components |
3 |
1.5KE100 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 90.0V(min), 110V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
4 |
1.5KE100C |
Transient voltage suppressor. 1500 W. Breakdown voltage 90.0 V(min), 110 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
5 |
1.5KE200A |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
6 |
1.5KE200CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
7 |
2N3055HV |
90.000W Power NPN Metal Can Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
8 |
BD905 |
90.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
9 |
BD906 |
90.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
10 |
BD907 |
90.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
11 |
BD908 |
90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
12 |
BD909 |
90.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
13 |
BD910 |
90.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
14 |
BD911 |
90.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
15 |
BD912 |
90.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 15.000A Ic, 5 hFE. |
Continental Device India Limited |
16 |
CSA1301OF |
90.000W Power PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 80 - 200 hFE. |
Continental Device India Limited |
17 |
CSA1943F |
90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 160 hFE. Complementary CSC5200F |
Continental Device India Limited |
18 |
CSA1943FO |
90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 80 - 160 hFE. Complementary CSC5200FO |
Continental Device India Limited |
19 |
CSA1943FR |
90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 110 hFE. Complementary CSC5200FR |
Continental Device India Limited |
20 |
CSB817OF |
90.000W Power PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
21 |
CSC3280OF |
90.000W Power NPN Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 80 - 200 hFE. |
Continental Device India Limited |
22 |
CSC5200F |
90.000W Power NPN Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 160 hFE. |
Continental Device India Limited |
23 |
CSD1047OF |
90.000W Power NPN Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
24 |
D2525P900 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 190.0. Wavelength 1577.85. Tolerance +-0.4nm. |
Agere Systems |
25 |
DSC1001BI5-090.0000 |
Clock and Timing - Oscillators |
Microchip |
26 |
DSC1001BI5-090.0000T |
Clock and Timing - Oscillators |
Microchip |
27 |
DSC1001DL2-090.0000 |
Clock and Timing - Oscillators |
Microchip |
28 |
DSC1001DL2-090.0000T |
Clock and Timing - Oscillators |
Microchip |
29 |
DSC1003DL2-090.0000T |
Clock and Timing - Oscillators |
Microchip |
30 |
DV40400 |
CHARACTER LCD MODULE display format: 40x4 ; module size: 190.0x54.0x10.5; viewing size: 147.0x29.5; dot size: 0.50x0.55; character size: 3.54x4.89; |
Data International CO.LTD. |
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