| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 2 |
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 3 |
1719-8 |
8 W, 28 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 4 |
1N147 |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
| 5 |
1N147A |
Germanium UHF Mixer f=900 MHz NF=10 to 9.0 dB |
Motorola |
| 6 |
2020-900 |
Delay 900 +/-18 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 7 |
2089-6217-00 |
800-900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 8 |
2089-6219-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 9 |
2089-6317-00 |
800-900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 10 |
2089-6319-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 11 |
2089-6417-00 |
800-900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 12 |
2089-6419-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 13 |
2089-6617-00 |
800-900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 14 |
2089-6619-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 15 |
2089-6817-00 |
800-900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 16 |
2089-6819-00 |
1700-1900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 17 |
2900 Series |
Temperature Stable Resonator |
Skyworks Solutions |
| 18 |
2N5014 |
900 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
| 19 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 20 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 21 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
| 22 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 23 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 24 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 25 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
| 26 |
3032 |
90 CROSSOVER HYBRID COUPLER 800-900,890-960, OR 1700-1900 MHZ |
Tyco Electronics |
| 27 |
3032-6017-00 |
800-900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 28 |
3032-6019-00 |
1700-1900 MHz, 3dB, 90 crossover hybrid coupler |
MA-Com |
| 29 |
7001 |
900 MHz THREE GAIN LEVEL LNA |
SGS Thomson Microelectronics |
| 30 |
7001 |
900 MHz THREE GAIN LEVEL LNA |
ST Microelectronics |
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