| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5014 |
900 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
| 2 |
AB380-C1500RG |
900 V, 1.5 A Avalanche glass passivated bridge rectifier |
EIC discrete Semiconductors |
| 3 |
AR1104S29 |
2900 V, 1680 A, 17.9 kA rectifier diode |
POSEICO SPA |
| 4 |
AR904S29 |
2900 V, 1230 A, 10.1 kA rectifier diode |
POSEICO SPA |
| 5 |
B380C1000 |
900 V, 1 A glass passivated bridge rectifier |
Fagor |
| 6 |
B380C1500R |
900 V, 1.5 A glass passivated bridge rectifier |
Fagor |
| 7 |
B380C800 |
900 V, 0.8 A glass passivated bridge rectifier |
Fagor |
| 8 |
BU326A |
900 V, 6 A, 60 W, NPN silicon power transistor |
Texas Instruments |
| 9 |
BU426A |
Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V |
SGS Thomson Microelectronics |
| 10 |
BU426A |
900 V, NPN silicon power transistor |
TRANSYS Electronics Limited |
| 11 |
FB380-C1500G |
900 V, 1.5 A, fast recovery glass passivated bridge rectifier |
EIC discrete Semiconductors |
| 12 |
MAX6403BS39-T |
3.900 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 13 |
MAX6404BS39-T |
3.900 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 14 |
MAX6405BS39-T |
3.900 V, mP supervisory circuit in 4-bump (2 x 2) chip-scale package |
MAXIM - Dallas Semiconductor |
| 15 |
MJE1320 |
POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS |
Motorola |
| 16 |
STB21N90K5 |
N-channel 900 V, 0.25 Ohm, 18.5 A D2PAK Zener-protected SuperMESH(TM) 5 Power MOSFET |
ST Microelectronics |
| 17 |
STF21N90K5 |
N-channel 900 V, 0.25 Ohm, 18.5 A TO-220FP Zener-protected SuperMESH(TM) 5 Power MOSFET |
ST Microelectronics |
| 18 |
STP21N90K5 |
N-channel 900 V, 0.25 Ohm, 18.5 A TO-220 Zener-protected SuperMESH(TM) 5 Power MOSFET |
ST Microelectronics |
| 19 |
STP3NB90 |
N-CHANNEL 900 V - 4 OHM - 3.5 A - TO-220/TO-220FP POWERMESH MOSFET |
ST Microelectronics |
| 20 |
STP3NB90FP |
N-CHANNEL 900 V - 4 OHM - 3.5 A - TO-220/TO-220FP POWERMESH MOSFET |
ST Microelectronics |
| 21 |
STW11NK90Z |
N-channel 900 V, 0.82 Ohm typ., 9.2 A Zener-protected SuperMESH(TM) Power MOSFET in a TO-247 package |
ST Microelectronics |
| 22 |
STW21N90K5 |
N-channel 900 V, 0.25 Ohm, 18.5 A TO-247 Zener-protected SuperMESH(TM) 5 Power MOSFET |
ST Microelectronics |
| 23 |
STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET |
ST Microelectronics |
| 24 |
TR1104SG29 |
2900 V, rectifier diode |
TRANSYS Electronics Limited |
| 25 |
TR1107SG39 |
3900 V, rectifier diode |
TRANSYS Electronics Limited |
| 26 |
TR1109SG49 |
4900 V, rectifier diode |
TRANSYS Electronics Limited |
| 27 |
TR1109SG49 |
4900 V, rectifier diode |
TRSYS |
| 28 |
TR2007SF39 |
3900 V, rectifier diode |
TRANSYS Electronics Limited |
| 29 |
TR2106SY39 |
3900 V, rectifier diode |
TRANSYS Electronics Limited |
| 30 |
TR2906SZ39 |
3900 V, rectifier diode |
TRANSYS Electronics Limited |
| | | |
