| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3595-1 |
125 V, 500 mW silicon switching diode |
BKC International Electronics |
| 2 |
1N3595-1 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 3 |
1N3595-1 HARD GLASS |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 4 |
1N3595-1HARDGLASS |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 5 |
1N4695-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 6 |
1N4695-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 7 |
1N5295-1 |
CURRENT REGULATOR DIODES |
Compensated Devices Incorporated |
| 8 |
1N5295-1 |
Current Limiter Diode |
Microsemi |
| 9 |
1N5295-1E3 |
|
Microsemi |
| 10 |
1N5395-T3 |
1.5A SILICON RECTIFIER |
Won-Top Electronics |
| 11 |
1N5395-TB |
1.5A SILICON RECTIFIER |
Won-Top Electronics |
| 12 |
2082-6195-30 |
2 Watt, DC-18 GHz, Fixed coaxial attenuator |
MA-Com |
| 13 |
2082-6195-30 |
Fixed Coaxial Attenuators |
Tyco Electronics |
| 14 |
2SC4095-T1 |
For amplify microwave and low noise. |
NEC |
| 15 |
2SC4095-T2 |
For amplify microwave and low noise. |
NEC |
| 16 |
2SC5195-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 17 |
2SK2695-01 |
N-channel MOS-FET |
Fuji Electric |
| 18 |
2SK2895-01 |
N-channel MOS-FET |
Fuji Electric |
| 19 |
2SK3295-S |
Power MOS FET |
NEC |
| 20 |
2SK3295-ZJ |
Power MOS FET |
NEC |
| 21 |
2SK3295-ZK |
Power MOS FET |
NEC |
| 22 |
33095-30 |
Saturable Reactor |
Unknow |
| 23 |
33095-31B |
Saturable Reactor |
Unknow |
| 24 |
33095-31S |
Saturable Reactor |
Unknow |
| 25 |
33095-85 |
Saturable Reactor |
Unknow |
| 26 |
395-01 |
Motorola case, dimensions, similar with BMA-2 |
Motorola |
| 27 |
395-02 |
CASE DIMENSIONS |
Motorola |
| 28 |
42095-005 |
NEGATIVE HIGH TEMPERATURE REGULATOR |
Micropac Industries |
| 29 |
42095-012 |
NEGATIVE HIGH TEMPERATURE REGULATOR |
Micropac Industries |
| 30 |
42095-015 |
NEGATIVE HIGH TEMPERATURE REGULATOR |
Micropac Industries |
| | | |
