No. |
Part Name |
Description |
Manufacturer |
1 |
1242 (RJ26 STYLE) |
Bulk Metal Foil Technology, Precision Trimming Potentiometers, QPL Approved 1/4 Inch Square, Qualified to Mil-PRF-22097, Char. F, RJ26 |
Vishay |
2 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
3 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
4 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
5 |
AM29F016 |
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
Advanced Micro Devices |
6 |
APPLICATION-NOTE |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 |
NEC |
7 |
GM71C17800C |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
8 |
GM71C17800C-5 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
9 |
GM71C17800C-6 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
10 |
GM71C17800C-7 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
11 |
GM71C17800CJ |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
12 |
GM71C17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
13 |
GM71C17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
14 |
GM71C17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
15 |
GM71C17800CLJ-5 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
16 |
GM71C17800CLJ-6 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
17 |
GM71C17800CLJ-7 |
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
18 |
GM71C17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
19 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
20 |
GM71C17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
21 |
GM71C17800CT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
22 |
GM71C17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
23 |
GM71C17800CT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
24 |
GM71CS17800CJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns |
Hynix Semiconductor |
25 |
GM71CS17800CJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
26 |
GM71CS17800CJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns |
Hynix Semiconductor |
27 |
GM71CS17800CLJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
28 |
GM71CS17800CLJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
29 |
GM71CS17800CLJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
30 |
GM71CS17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
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