| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE120 |
97.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 2 |
1.5KE120C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 97.20 V. Test current IT = 1 mA. |
Bytes |
| 3 |
1N5659 |
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 4 |
1N6297 |
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 5 |
1N6297B |
Diode TVS Single Bi-Dir 97.2V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
| 6 |
1N6297C |
Diode TVS Single Bi-Dir 97.2V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
| 7 |
2722 162 06061 |
ISOLATORS for P.C. Board Mounting, frequency range 2297.5 to 2367.5 MHz |
Philips |
| 8 |
5KP97.5 |
Diode TVS Single Uni-Dir 9V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 9 |
D2525P877 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 187.7. Wavelength 1597.19. Tolerance +-0.4nm. |
Agere Systems |
| 10 |
NX8562LB971-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1597.18 nm. Frequency 187.70 THz. Anode ground. FC-PC connector. |
NEC |
| 11 |
NX8562LF971-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1597.18 nm. Frequency 187.70 THz. Anode floating. FC-PC connector. |
NEC |
| 12 |
NX8563LB971-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1597.18 nm. Frequency 187.70 THz. FC-PC connector. Anode ground. |
NEC |
| 13 |
NX8563LF971-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1597.18 nm. Frequency 187.70 THz. FC-PC connector. Anode floating. |
NEC |
| 14 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 15 |
P4KE120-T3 |
Reverse stand-off voltage: 97.20V transient voltage suppressor |
Won-Top Electronics |
| 16 |
P4KE120-TB |
Reverse stand-off voltage: 97.20V transient voltage suppressor |
Won-Top Electronics |
| 17 |
P4KE120C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 97.20 V. Test current IT = 1 mA. |
Bytes |
| 18 |
P4KE120C |
97.20V; 400W transient voltage suppressor |
Diodes |
| 19 |
P4KE120C-T3 |
Reverse stand-off voltage: 97.20V transient voltage suppressor |
Won-Top Electronics |
| 20 |
P4KE120C-TB |
Reverse stand-off voltage: 97.20V transient voltage suppressor |
Won-Top Electronics |
| 21 |
P6KE120 |
97.20V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 22 |
P6KE120 |
Diode TVS Single Uni-Dir 97.2V 600W Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
| 23 |
P6KE120-T3 |
Reverse stand-off voltage: 97.20V, 600W transient voltage suppressor |
Won-Top Electronics |
| 24 |
P6KE120-TB |
Reverse stand-off voltage: 97.20V, 600W transient voltage suppressor |
Won-Top Electronics |
| 25 |
P6KE120C |
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 97.20 V. Test current IT = 1 mA. |
Bytes |
| 26 |
P6KE120C |
Diode TVS Single Bi-Dir 97.2V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 27 |
P6KE120C-T3 |
Reverse stand-off voltage: 97.20V, 600W transient voltage suppressor |
Won-Top Electronics |
| 28 |
P6KE120C-TB |
Reverse stand-off voltage: 97.20V, 600W transient voltage suppressor |
Won-Top Electronics |
| 29 |
TM244B |
CHARACTER TYPE MONOCHROME LCD MODULE display format: 24x4; module size: 125.0x39.0x13.7; viewing size: 97.0x27.0; character size: 3.2x5.55; dot size: 0.6x0.65; controller: S6A0079; |
TIANMA Microelectronics |
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