| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HN29V25611A |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
Renesas |
| 2 |
M5M29F25611VP |
MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
Mitsubishi Electric Corporation |
| 3 |
MAX4174BNEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 99, 1+ (Rf/Dg) noninverting gain 100, -3dB BW 230kHz. |
MAXIM - Dallas Semiconductor |
| 4 |
MAX4175BNEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 99, 1+ (Rf/Dg) noninverting gain 100, -3dB BW 230kHz. |
MAXIM - Dallas Semiconductor |
| 5 |
MAX4274BNESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 99, 1+ (Rf/Dg) noninverting gain 100, -3dB BW 230kHz. |
MAXIM - Dallas Semiconductor |
| 6 |
MAX4274BNEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 99, 1+ (Rf/Dg) noninverting gain 100, -3dB BW 230kHz. |
MAXIM - Dallas Semiconductor |
| 7 |
MAX4275BNESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 99, 1+ (Rf/Dg) noninverting gain 100, -3dB BW 230kHz. |
MAXIM - Dallas Semiconductor |
| 8 |
MAX4275BNEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 99, 1+ (Rf/Dg) noninverting gain 100, -3dB BW 230kHz. |
MAXIM - Dallas Semiconductor |
| 9 |
SF245 |
Si-npn RF transistor, possibly equivalent BF199, BF241, BF311 |
RFT |
| | | |
