| No. |
Part Name |
Description |
Manufacturer |
| 1 |
30WQ09FTR |
90V 3.3A Schottky Discrete Diode in a D-Pak package |
International Rectifier |
| 2 |
ADG509FTQ |
4/8 Channel Fault-Protected Analog Multiplexers |
Analog Devices |
| 3 |
APTM10HM09FT3G |
Full Bridge |
Microsemi |
| 4 |
APTM10HM19FT3G |
Full Bridge |
Microsemi |
| 5 |
APTM120A29FTG |
Phase Leg |
Microsemi |
| 6 |
DDZX39FTS |
Zener Diodes |
Diodes |
| 7 |
HN9C09FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 8 |
KSC5039FTU |
NPN Planar Silicon Transistor |
Fairchild Semiconductor |
| 9 |
KSE13009FTU |
NPN Silicon Transistor |
Fairchild Semiconductor |
| 10 |
M5M29FT800FP |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 11 |
M5M29FT800FP-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 12 |
M5M29FT800FP-12 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 13 |
M5M29FT800FP-80 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 14 |
M5M29FT800RV-10 |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 15 |
M5M29FT800RV-12 |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 16 |
M5M29FT800RV-80 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 17 |
M5M29FT800RV-80-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 18 |
M5M29FT800RV-80-12 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 19 |
M5M29FT800VP |
8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 20 |
M5M29FT800VP-10 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 21 |
M5M29FT800VP-12 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 22 |
M5M29FT800VP-80 |
CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 23 |
MC34059FTA |
HEX EIA-485 TRANSCEIVER with THREE-STATE OUTPUTS |
Motorola |
| 24 |
MK1491-09FTR |
AMD Geode GX2 Clock Source |
Integrated Circuit Systems |
| 25 |
RN1109FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 26 |
RN2109FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 27 |
RN739FT106 |
PIN Diode |
ROHM |
| 28 |
RN779FT106 |
PIN Diode |
ROHM |
| 29 |
STG719FTR |
LOW VOLTAGE 4ohm SPDT SWITCH |
ST Microelectronics |
| 30 |
TB62269FTG |
Stepping motor driver IC |
TOSHIBA |
| | | |
