| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FCD9N60NTM |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 2 |
FCMT199N60 |
N-Channel SuperFET� II MOSFET |
Fairchild Semiconductor |
| 3 |
FCP9N60N |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 4 |
FCPF9N60NT |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 5 |
FQA19N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 6 |
FQAF19N60 |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 7 |
IRFB9N60 |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) |
International Rectifier |
| 8 |
IRFB9N60A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 9 |
IRFB9N60APBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 10 |
IRFPS29N60L |
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package |
International Rectifier |
| 11 |
IRFPS59N60C |
SMPS MOSFET |
International Rectifier |
| 12 |
IRFS9N60A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 13 |
IRFSL9N60A |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 14 |
PHB9N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 15 |
PHP9N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 16 |
PHW9N60E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 17 |
STD9N60M2 |
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 18 |
STF9N60M2 |
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 19 |
STL9N60M2 |
N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
| 20 |
STP9N60M2 |
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 21 |
STU9N60M2 |
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package |
ST Microelectronics |
| 22 |
T529N600 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 23 |
T649N600 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 24 |
T719N600 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 25 |
TK39N60W |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 26 |
TK39N60W5 |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| 27 |
TK39N60X |
Power MOSFET (N-ch 500V<VDSS≤700V) |
TOSHIBA |
| | | |
