No. |
Part Name |
Description |
Manufacturer |
1 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
2 |
CSD88539ND |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
3 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
4 |
CSD88539NDT |
60-V Dual N-Channel NexFET Power MOSFET, CSD88539ND 8-SOIC -55 to 150 |
Texas Instruments |
5 |
EC2-9ND |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type |
NEC |
6 |
EE2-9ND |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type |
NEC |
7 |
MAH28139ND |
OBDH bus terminal |
Dynex Semiconductor |
8 |
MAQ28139ND |
OBDH bus terminal |
Dynex Semiconductor |
9 |
MAR28139ND |
OBDH bus terminal |
Dynex Semiconductor |
10 |
MAS28139ND |
OBDH bus terminal |
Dynex Semiconductor |
11 |
SY88149ND |
Clock and Timing - High Speed Communication |
Microchip |
12 |
SY88149NDLMG |
Clock and Timing - High Speed Communication |
Microchip |
13 |
SY88149NDLMG-TR |
Clock and Timing - High Speed Communication |
Microchip |
14 |
SY88349ND |
Clock and Timing - High Speed Communication |
Microchip |
15 |
SY88349NDLMG |
Clock and Timing - High Speed Communication |
Microchip |
16 |
SY88349NDLMG-TR |
Clock and Timing - High Speed Communication |
Microchip |
17 |
VN0109ND |
90 V, 3 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
18 |
VP0109ND |
P-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
19 |
VP0109ND |
-90 V, 8 ohm, P-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
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