| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HYB39S64160AT-10 |
64 MBit Synchronous DRAM |
Siemens |
| 2 |
HYB39S64160AT-8 |
64 MBit Synchronous DRAM |
Siemens |
| 3 |
HYB39S64160AT-8B |
64 MBit Synchronous DRAM |
Siemens |
| 4 |
HYB39S64160ATL-10 |
64Mbit Synchronous DRAM |
Siemens |
| 5 |
HYB39S64160ATL-8 |
64Mbit Synchronous DRAM |
Siemens |
| 6 |
HYB39S64160ATL-8B |
64Mbit Synchronous DRAM |
Siemens |
| 7 |
HYB39S64160BT-7 |
64M SDRAM Component |
Infineon |
| 8 |
HYB39S64160BT-7,5 |
64M SDRAM Component |
Infineon |
| 9 |
HYB39S64160BT-7.5 |
64-MBit Synchronous DRAM |
Infineon |
| 10 |
HYB39S64160BT-8 |
64M SDRAM Component |
Infineon |
| 11 |
TC59S6416 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 12 |
TC59S6416-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 13 |
TC59S6416-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 14 |
TC59S6416BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 15 |
TC59S6416BFT-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 16 |
TC59S6416BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 17 |
TC59S6416BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 18 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 19 |
TC59S6416BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 20 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 21 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| | | |
