| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP120 |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 2 |
15KP120C |
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A. |
Panjit International Inc |
| 3 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 4 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 5 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 6 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 7 |
2SC1008 |
Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 8 |
2SC1009 |
High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. |
USHA India LTD |
| 9 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 10 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 11 |
BSP 319 |
N-Channel MOSFET, 50V, SOT-223, RDSon = 70mW, 3.8A, LL |
Infineon |
| 12 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
| 13 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 14 |
BU208D |
NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. |
USHA India LTD |
| 15 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 16 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 17 |
D100_06 |
Rectifier diode. All purpose mean power rectifier diodes, Non-controllable rectifiers. Free-wheeling diodes. Vrrm = 600V, Vrsm = 700V. |
USHA India LTD |
| 18 |
DCR1003_06 |
Thyristor. Vrrm = 600V, Vrsm = 700V. D.C. motor control, controlled rectifiers, high power drives. |
USHA India LTD |
| 19 |
DCR1474_06 |
Thyristor. Vrrm = 600V, Vrsm = 700V. D.C. motors control, controlled rectifiers, high power drives. |
USHA India LTD |
| 20 |
DCR504_06 |
Thyristor. Vrrm = 600V, Vrsm = 700V. D.C. motor control, controlled rectifiers, A.C controllers. |
USHA India LTD |
| 21 |
DS4000_06 |
Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes & welding. Vrrm = 600V, Vrsm = 700V. |
USHA India LTD |
| 22 |
FFM102 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 100V, maxVRMS = 70V, maxVDC = 100V. Current 1.0A. |
Rectron Semiconductor |
| 23 |
FFM107 |
Surface mount glass passivated fast recovery silicon rectifier. MaxVRRM = 1000V, maxVRMS = 700V, maxVDC = 1000V. Current 1.0A. |
Rectron Semiconductor |
| 24 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 25 |
MJE13005 |
NPN, silicon plastic power transistor. For 115 and 220V switch-mode applications such as switching regulators, inverters motor controls, solenoid/relay drivers and deflection circuits. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 4A |
USHA India LTD |
| 26 |
MJE13007 |
NPN, silicon plastic power transistor. Suited for 115 and 220V switch-mode applications such as switching regulators, inverters, motor controls, solenoid/relay. Vceo(sus) = 400Vdc, Vcev = 700Vdc, Veb = 9Vdc, Ic = 8Adc, Pd = 80W. |
USHA India LTD |
| 27 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 28 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 29 |
NTE5132A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 17V. Test current Izt = 70mA. |
NTE Electronics |
| 30 |
NTE5204A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 36V. Zener test current Izt = 70mA. |
NTE Electronics |
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