No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE120A |
102.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
2 |
1.5KE120A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
3 |
1.5KE120A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
4 |
1.5KE120CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
5 |
1.5KE120CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
6 |
1103 |
1024-BIT random access read/write dynamic memory |
Signetics |
7 |
1103-1 |
1024-BIT random access read/write dynamic memory (high speed version) |
Signetics |
8 |
1103-1IK |
1024-BIT random access read/write dynamic memory (high speed version) |
Signetics |
9 |
1103-1XA |
1024-BIT random access read/write dynamic memory (high speed version) |
Signetics |
10 |
1103IK |
1024-BIT random access read/write dynamic memory |
Signetics |
11 |
1103XA |
1024-BIT random access read/write dynamic memory |
Signetics |
12 |
24502BVA |
1024x4CMOSRAM |
Intersil |
13 |
2502 |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
14 |
2502B |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
15 |
2502I |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
16 |
2503 |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
17 |
2503TA |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
18 |
2503V |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
19 |
2504 |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
20 |
2504TA |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
21 |
2504V |
1024-BIT capacity multiplexed dynamic shift registers |
Signetics |
22 |
2533 |
1024-bit static shift register |
Signetics |
23 |
2533V |
1024-bit static shift register |
Signetics |
24 |
2602 |
1024-BIT random access Read/Write static memory |
Signetics |
25 |
2602B |
1024-BIT random access Read/Write static memory |
Signetics |
26 |
2602I |
1024-BIT random access Read/Write static memory |
Signetics |
27 |
28F010 |
1024K (128K x 8) CMOS FLASH MEMORY |
Intel |
28 |
28F010 |
1024K (128K X 8) CMOS FLASH MEMORY |
Intel |
29 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
30 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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