No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE120A |
102.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
2 |
1.5KE120A-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
3 |
1.5KE120A-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
4 |
1.5KE120CA-G |
Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
5 |
1.5KE120CA-HF |
Halogen Free Transient Voltage Suppressor (TVS) Axial Lead, PPPM=1500Watts, VRWM=102V, Tolerance=5% |
Comchip Technology |
6 |
24502BVA |
1024x4CMOSRAM |
Intersil |
7 |
28F010 |
1024K (128K x 8) CMOS FLASH MEMORY |
Intel |
8 |
28F010 |
1024K (128K X 8) CMOS FLASH MEMORY |
Intel |
9 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
10 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
11 |
5962-0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none. |
Aeroflex Circuit Technology |
12 |
5962-0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
13 |
5962-0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
14 |
5962-0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hold solder dipped. Total dose none. |
Aeroflex Circuit Technology |
15 |
5962-0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
16 |
5962-0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
17 |
5962-9560801NXD |
1024 x 36 Synchronous FIFO Memory |
Texas Instruments |
18 |
5962-9562701NXD |
1024 x 18 Synchronous FIFO Memory |
Texas Instruments |
19 |
5962D0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
20 |
5962D0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
21 |
5962D0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
22 |
5962D0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
23 |
5962D0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
24 |
5962D0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
25 |
5962L0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
26 |
5962L0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
27 |
5962L0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
28 |
5962L0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
29 |
5962L0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
30 |
5962L0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
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