| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE400 |
Ppk=1500W, Vc=574V transient voltage suppressor |
MCC |
| 2 |
1.5KE400C |
Ppk=1500W, Vc=574V transient voltage suppressor |
MCC |
| 3 |
82S09 |
576-BIT bipolar RAM (64x9) |
Signetics |
| 4 |
HA1-2556-9 |
57MHz/ Wideband/ Four Quadrant/ Voltage Output Analog Multiplier |
Intersil |
| 5 |
HA3-2556-9 |
57MHz/ Wideband/ Four Quadrant/ Voltage Output Analog Multiplier |
Intersil |
| 6 |
HA9P2556-9 |
57MHz/ Wideband/ Four Quadrant/ Voltage Output Analog Multiplier |
Intersil |
| 7 |
IR062HD4C10U-P2 |
575V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 8 |
IR082HD4C10U-P2 |
575V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 9 |
K4R761869A-F |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 10 |
K4R761869A-FBCCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 11 |
K4R761869A-FCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 12 |
K4R761869A-FCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 13 |
K4R761869A-GCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 14 |
K4R761869A-GCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 15 |
K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 16 |
P4KE400 |
Ppk=400W, Vc=574V transient voltage suppressor |
MCC |
| 17 |
P4KE400C |
Ppk=400W, Vc=574V transient voltage suppressor |
MCC |
| 18 |
P6KE400 |
Ppk=600W, Vc=574V transient voltage suppressor |
MCC |
| 19 |
P6KE400C |
Ppk=600W, Vc=574V transient voltage suppressor |
MCC |
| | | |
