No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE400 |
Ppk=1500W, Vc=574V transient voltage suppressor |
MCC |
2 |
1.5KE400C |
Ppk=1500W, Vc=574V transient voltage suppressor |
MCC |
3 |
82S09 |
576-BIT bipolar RAM (64x9) |
Signetics |
4 |
HA1-2556-9 |
57MHz/ Wideband/ Four Quadrant/ Voltage Output Analog Multiplier |
Intersil |
5 |
HA3-2556-9 |
57MHz/ Wideband/ Four Quadrant/ Voltage Output Analog Multiplier |
Intersil |
6 |
HA9P2556-9 |
57MHz/ Wideband/ Four Quadrant/ Voltage Output Analog Multiplier |
Intersil |
7 |
IR062HD4C10U-P2 |
575V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
8 |
IR082HD4C10U-P2 |
575V Hi-Voltage Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
9 |
K4R761869A-F |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
10 |
K4R761869A-FBCCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
11 |
K4R761869A-FCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
12 |
K4R761869A-FCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
13 |
K4R761869A-GCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
14 |
K4R761869A-GCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
15 |
K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
16 |
P4KE400 |
Ppk=400W, Vc=574V transient voltage suppressor |
MCC |
17 |
P4KE400C |
Ppk=400W, Vc=574V transient voltage suppressor |
MCC |
18 |
P6KE400 |
Ppk=600W, Vc=574V transient voltage suppressor |
MCC |
19 |
P6KE400C |
Ppk=600W, Vc=574V transient voltage suppressor |
MCC |
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