No. |
Part Name |
Description |
Manufacturer |
1 |
2-AA113 |
HF germanium diode pair for high-resistance radio detector and discriminator circuits |
TUNGSRAM |
2 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
3 |
2-AA118 |
HF Germanium tip diode pair for phase discriminator circuits |
TUNGSRAM |
4 |
2-AA119 |
HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits |
TUNGSRAM |
5 |
2-OA1172 |
HF germanium pair diode for discriminator and radio detector circuits |
TUNGSRAM |
6 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
7 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
8 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
9 |
2SA1177 |
HF Amp Applications |
SANYO |
10 |
2SK1740 |
HF amplifiers low frequency amplifiers analog switches |
SANYO |
11 |
AA116 |
HF germanium diode for low-resistance rectifier |
TUNGSRAM |
12 |
AA119 |
HF germanium tip diode for high-resistance rectifier circuit |
TUNGSRAM |
13 |
AN649 |
HFTA-04.0: Optical/Electrical Conversion in SDH/SONET Fiber Optic Systems |
MAXIM - Dallas Semiconductor |
14 |
AQV101 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
15 |
AQV101A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
16 |
AQV102 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
17 |
AQV102A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
18 |
AQV103 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
19 |
AQV103A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
20 |
AQV104 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
21 |
AQV104A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
22 |
AQV201 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
23 |
AQV201A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
24 |
AQV202 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
25 |
AQV202A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
26 |
AQV203 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
27 |
AQV203A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
28 |
AQV204 |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
29 |
AQV204A |
HF (High Function) Type [1-Channel (Form A) Type] |
Matsushita Electric Works(Nais) |
30 |
ASISD1905 |
HF/VHF POWER MOSFET N-Channel Enhancement Mode |
Advanced Semiconductor |
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