| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BUS48P |
NPN silicon power transistor 125W 15A 450V |
Motorola |
| 2 |
BUX85 |
Power 2A 450V NPN 50W |
ON Semiconductor |
| 3 |
MJE18006 |
Power 8A 450V NPN |
ON Semiconductor |
| 4 |
MTM2N45 |
N-CHANNEL TMOS POWER FET 2A 450V 4.0 ohms |
Motorola |
| 5 |
MTM2P45 |
P-CHANNEL TMOS POWER FET 2A 450V 6.0 ohms |
Motorola |
| 6 |
MTM4N45 |
N-CHANNEL TMOS POWER FET 4A 450V 2.0 ohms |
Motorola |
| 7 |
MTM7N45 |
N-CHANNEL TMOS POWER FET 7A 450V 1.2 ohms |
Motorola |
| 8 |
MTM7N50 |
N-CHANNEL TMOS POWER FET 7A 450V 1.2 ohms |
Motorola |
| 9 |
MTP2N45 |
N-CHANNEL TMOS POWER FET 2A 450V 4.0 ohms |
Motorola |
| 10 |
MTP2P45 |
P-CHANNEL TMOS POWER FET 2A 450V 6.0 ohms |
Motorola |
| 11 |
MTP4N45 |
N-CHANNEL TMOS POWER FET 4A 450V 2.0 ohms |
Motorola |
| 12 |
RFM10N12 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 13 |
RFM10N15 |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 14 |
RFM10N15L |
10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 15 |
SM30G12 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 30A 450V |
TOSHIBA |
| | | |
