| No. |
Part Name |
Description |
Manufacturer |
| 1 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 2 |
ADS1248 |
Precision 24 Bit ADC with integrated Low Noise PGA (48nV at a Gain of 128) |
Texas Instruments |
| 3 |
AN2131 |
(AN213x Series) Video Camera Gamma Correction and AGC Circuits |
Matsushita Electric Works(Nais) |
| 4 |
ARA05050 |
The ARA05050 is a GaAs IC designed to provide the reverse path amplification and output level control functions in a CATV Set-Top ... |
Anadigics Inc |
| 5 |
ARA1400 |
The ARA1400 is a GaAs IC designed to provide the reverse path amplification and output level control functions in a CATV Set-Top ... |
Anadigics Inc |
| 6 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
| 7 |
CLI800W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 8 |
CLI810W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 9 |
CLI820W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 10 |
CLI830W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 11 |
CLI835W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 12 |
CQY13 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 13 |
CQY23 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 14 |
FMM1103VJ |
The FMM1103VJ is a GaAs Microwave Static Frequency Divider designed for dividing an input signal by 8 over a frequency range from 2.0 to 12.0 GHz |
etc |
| 15 |
H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 16 |
H24B2 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
| 17 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 18 |
K101 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 19 |
K102 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 20 |
K102 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 21 |
K104 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 22 |
K104 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 23 |
K301 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 24 |
K301 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 25 |
K302 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 26 |
K302 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 27 |
K304 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 28 |
K304 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 29 |
K3610 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kodenshi Corp |
| 30 |
K3610 |
Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| | | |
