| No. |
Part Name |
Description |
Manufacturer |
| 1 |
03P2J |
300mA Power mini-mold SCR |
NEC |
| 2 |
03P2J-T1 |
300mA Power mini-mold SCR |
NEC |
| 3 |
03P2J-T2 |
300mA Power mini-mold SCR |
NEC |
| 4 |
03P4J |
300mA power mini-mold SCR |
NEC |
| 5 |
03P4J-T1 |
300mA power mini-mold SCR |
NEC |
| 6 |
03P4J-T2 |
300mA power mini-mold SCR |
NEC |
| 7 |
03P5J |
300mA Power mini-mold SCR |
NEC |
| 8 |
03P5J-T1 |
300mA Power mini-mold SCR |
NEC |
| 9 |
03P5J-T2 |
300mA Power mini-mold SCR |
NEC |
| 10 |
100BGQ015 |
15V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 11 |
100BGQ015J |
15V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 12 |
100BGQ030 |
30V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 13 |
100BGQ030J |
30V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 14 |
100BGQ045 |
45V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 15 |
100BGQ045J |
45V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 16 |
100BGQ100 |
100V 100A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 17 |
100BGQ100J |
100V 100A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 18 |
150EBU02 |
200V 150A Ultra-Fast Discrete Diode in a PowIRtab package |
International Rectifier |
| 19 |
150EBU04 |
400V 150A Ultra-Fast Discrete Diode in a PowIRtab package |
International Rectifier |
| 20 |
175BGQ030 |
30V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 21 |
175BGQ030J |
30V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 22 |
175BGQ045 |
45V 175A Schottky Discrete Diode in a PowIRtab package |
International Rectifier |
| 23 |
175BGQ045J |
45V 175A Schottky Discrete Diode in a PowIRtab (Short) package |
International Rectifier |
| 24 |
2N3902 |
3.5A power, high voltage, NPN silicon transistor 100W |
Motorola |
| 25 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 26 |
2N5157 |
3.5A power, high voltage, NPN silicon transistor 100W |
Motorola |
| 27 |
2N5629 |
16A power NPN transistor complementary silicon 200W |
Motorola |
| 28 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 29 |
2N6029 |
16A power PNP transistor complementary silicon 200W |
Motorola |
| 30 |
2N6542 |
3A power-switching N-P-N transistor. |
General Electric Solid State |
| | | |
