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Datasheets for A RECTIFIER

Datasheets found :: 126
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 100JB05L V(rrm): 50V; 10A rectifier bridge International Rectifier
2 100JB10L V(rrm): 1000V; 10A rectifier bridge International Rectifier
3 100JB12L V(rrm): 1200V; 10A rectifier bridge International Rectifier
4 100JB1L V(rrm): 100V; 10A rectifier bridge International Rectifier
5 100JB2L V(rrm): 200V; 10A rectifier bridge International Rectifier
6 100JB4L V(rrm): 400V; 10A rectifier bridge International Rectifier
7 100JB6L V(rrm): 600V; 10A rectifier bridge International Rectifier
8 100JB8L V(rrm): 800V; 10A rectifier bridge International Rectifier
9 16MB100W V(rrm): 1000V; 16A rectifier bridge International Rectifier
10 16MB120W V(rrm): 1200V; 16A rectifier bridge International Rectifier
11 1N4001 1A Rectifier Diode 50V Motorola
12 1N4002 1A Rectifier Diode 100V Motorola
13 1N4003 1A Rectifier Diode 200V Motorola
14 1N4004 1A Rectifier Diode 400V Motorola
15 1N4005 1A Rectifier Diode 600V Motorola
16 1N4006 1A Rectifier Diode 800V Motorola
17 1N4007 1A Rectifier Diode 1000V Motorola
18 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
19 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
20 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
21 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
22 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
23 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
24 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
25 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
26 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
27 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
28 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
29 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
30 250JB05L V(rrm): 50V; 25A rectifier bridge International Rectifier


Datasheets found :: 126
Page: | 1 | 2 | 3 | 4 | 5 |



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