No. |
Part Name |
Description |
Manufacturer |
1 |
100JB05L |
V(rrm): 50V; 10A rectifier bridge |
International Rectifier |
2 |
100JB10L |
V(rrm): 1000V; 10A rectifier bridge |
International Rectifier |
3 |
100JB12L |
V(rrm): 1200V; 10A rectifier bridge |
International Rectifier |
4 |
100JB1L |
V(rrm): 100V; 10A rectifier bridge |
International Rectifier |
5 |
100JB2L |
V(rrm): 200V; 10A rectifier bridge |
International Rectifier |
6 |
100JB4L |
V(rrm): 400V; 10A rectifier bridge |
International Rectifier |
7 |
100JB6L |
V(rrm): 600V; 10A rectifier bridge |
International Rectifier |
8 |
100JB8L |
V(rrm): 800V; 10A rectifier bridge |
International Rectifier |
9 |
16MB100W |
V(rrm): 1000V; 16A rectifier bridge |
International Rectifier |
10 |
16MB120W |
V(rrm): 1200V; 16A rectifier bridge |
International Rectifier |
11 |
1N4001 |
1A Rectifier Diode 50V |
Motorola |
12 |
1N4002 |
1A Rectifier Diode 100V |
Motorola |
13 |
1N4003 |
1A Rectifier Diode 200V |
Motorola |
14 |
1N4004 |
1A Rectifier Diode 400V |
Motorola |
15 |
1N4005 |
1A Rectifier Diode 600V |
Motorola |
16 |
1N4006 |
1A Rectifier Diode 800V |
Motorola |
17 |
1N4007 |
1A Rectifier Diode 1000V |
Motorola |
18 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
19 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
20 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
21 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
22 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
23 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
24 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
25 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
26 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
27 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
28 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
29 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
30 |
250JB05L |
V(rrm): 50V; 25A rectifier bridge |
International Rectifier |
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