No. |
Part Name |
Description |
Manufacturer |
1 |
CM450HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
2 |
CM450HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
3 |
CM450HA-5F |
Trench Gate Design Single IGBTMOD�� 450 Amperes/250 Volts |
Powerex Power Semiconductors |
4 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
5 |
CM600HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
6 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
7 |
M32L32321SA-5F |
512K x 32 Bit x 2 Banks Synchronous Graphic RAM |
etc |
| | | |