No. |
Part Name |
Description |
Manufacturer |
1 |
K4R521669A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
2 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
3 |
K4R761869A-F |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
4 |
K4R761869A-FBCCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
5 |
K4R761869A-FCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
6 |
K4R761869A-FCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
7 |
K4R761869A-GCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
8 |
K4R761869A-GCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
9 |
K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
10 |
K9F1208Q0A-DIB0 |
64M x 8 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
11 |
K9F1208U0A-DIB0 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
12 |
K9F1216Q0A-DIB0 |
32M x 16 bit NAND flash memory, 1.70 - 1.95V |
Samsung Electronic |
13 |
K9F1216U0A-DIB0 |
32M x 16 bit NAND flash memory, 2.7 - 3.6V |
Samsung Electronic |
14 |
KFG1216D2A-DIB5 |
FLASH MEMORY |
Samsung Electronic |
15 |
KFG1216D2A-DIB6 |
FLASH MEMORY |
Samsung Electronic |
16 |
KFG1216D2A-DID5 |
FLASH MEMORY |
Samsung Electronic |
17 |
KFG1216D2A-DID6 |
FLASH MEMORY |
Samsung Electronic |
18 |
KFG1216Q2A-DIB5 |
FLASH MEMORY |
Samsung Electronic |
19 |
KFG1216Q2A-DIB6 |
FLASH MEMORY |
Samsung Electronic |
20 |
KFG1216Q2A-DID5 |
FLASH MEMORY |
Samsung Electronic |
21 |
KFG1216Q2A-DID6 |
FLASH MEMORY |
Samsung Electronic |
22 |
KFG1216U2A-DIB5 |
FLASH MEMORY |
Samsung Electronic |
23 |
KFG1216U2A-DIB6 |
FLASH MEMORY |
Samsung Electronic |
24 |
KFG1216U2A-DID5 |
FLASH MEMORY |
Samsung Electronic |
25 |
KFG1216U2A-DID6 |
FLASH MEMORY |
Samsung Electronic |
26 |
MR18R1622(4/8/G)AF0 |
(16Mx16)*2(4/8/16)pcs RIMM� Module based on 256Mb A-die Data Sheet |
Samsung Electronic |
27 |
MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
28 |
MR18R326GAG0-CM8 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
29 |
MR18R326GAG0-CT9 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
30 |
OPA140A-DIE |
High-Precision, Low-Noise, Rail-to-Rail Output, 11MHz JFET Op Amp |
Texas Instruments |
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